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型号	厂家	封装	描述	日期

BUZ307	Infineon Technologies AG		TRANSISTOR \| MOSFET \| N-CHANNEL \| 800V V(BR)DSS \| 3A I(D) \| TO-218AA	20031026
BUZ307	Infineon Technologies AG		TRANSISTOR \| MOSFET \| N-CHANNEL \| 800V V(BR)DSS \| 3A I(D) \| TO-218AA	20031022
BUZ307	Philips Semiconductors		[替换型号]TRANSISTOR \| MOSFET \| N-CHANNEL \| 800V V(BR)DSS \| 3A I(D) \| TO-218AA	20030926
BUZ307	American Microsemiconductor Inc		[替换型号]TRANSISTOR \| MOSFET \| N-CHANNEL \| 800V V(BR)DSS \| 3A I(D) \| TO-218AA	20030926
BUZ307	Infineon(siemens)		N-Channel SIPMOS Power Transistor. 800V. TO-218. 3.00Ohm. 3.0A	20030310
BUZ307			N-Channel Enhancement MOSFET	20020807
BUZ307			N-Channel Enhancement MOSFET	20020807
BUZ307	Siemens		[替换型号]Functional Equivalent:SemeLAB 2SK2603	20120118
BUZ307	Infineon		[替换型号]Compatible Equivalent:IRF IRFPE30	20120118
BUZ307	Siemens	TO-218	[替换型号]Replacement:Toshiba 2SK2603	20120101
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